Method for producing a transistor device having a superjunction structure

ABSTRACT

A method for forming a superjunction transistor device includes: forming a plurality of semiconductor layers one on top of the other; implanting dopant atoms of a first doping type into each semiconductor layer to form first implanted regions in each semiconductor layer; implanting dopant atoms of a second doping type into each semiconductor layer to form second implanted regions in each semiconductor layer. Each of implanting the dopant atoms of the first and second doping types into each semiconductor layer includes forming a respective implantation mask on a respective surface of each semiconductor layer, and at least one of forming the first implanted regions and the second implanted regions in at least one of the semiconductor layers includes a tilted implantation process which uses an implantation vector that is tilted by a tilt angle relative to a normal of the respective horizontal surface of the respective semiconductor layer.

TECHNICAL FIELD

This disclosure in general relates to a method for forming asuperjunction transistor device, in particular, for forming a driftregion of a superjunction transistor device.

BACKGROUND

A superjunction device, which is often also referred to as acompensation device, includes a drift region with a plurality of regionsof a first doping type (conductivity type) and a plurality of regions ofa second doping type (conductivity type) complementary to the firstdoping type. In some publications, the first doping type regions arereferred to as drift regions and the second doping type regions arereferred to as compensation regions.

The drift region of a superjunction device can be formed by epitaxiallygrowing several semiconductor layers one on top of the other on asubstrate by selectively implanting dopant atoms of the first dopingtype and doping atoms of the second doping type into each of thesemiconductor layers, and by a temperature process in which theimplanted dopant atoms diffuse in the semiconductor layers such that theregions of the first doping type and the regions of the second dopingtype are formed. This type of process is sometimes referred to asmulti-epi-multi-implant (MEMI) process.

A superjunction device may include a plurality of transistor cells, witheach transistor cell including a first doping type region or a sectionof a first doping type region and a second doping type region or asection of a second doping type region. “The pitch” of a superjunctiondevice is the center distance between two neighboring first doping typeregions or between two neighboring second doping type regions. Thespecific on-resistance R_(ON). A of a transistor device is given by theon-resistance multiplied with the area of a semiconductor body in whichthe transistor device is implemented. One way to increase the specificon-resistance is to increase the number of transistor cells per unitarea. Increasing the number of transistor cells is equivalent toreducing the pitch.

In an MEMI process, the dopant atoms implanted into the individualsemiconductor layers diffuse in a vertical direction (which is adirection in which the semiconductor layers are formed one on top of theother) so that the dopant atoms of the first doping type form the firstregions and the dopant atoms of the second doping type form the secondregions, wherein each of these first and second regions extends acrossthe semiconductor layers in the vertical direction. Diffusion of thedopant atoms, however, is not restricted to the vertical direction, butalso includes diffusion in a horizontal direction. The thicker theindividual semiconductor layers, the farther the dopant atoms have todiffuse in the vertical and horizontal direction. Reducing the pitchrequires reducing the diffusion in the horizontal direction and,consequently, in the vertical direction. This may be achieved byreducing the thickness of the semiconductor layers.

When implanting dopant atoms using an implantation angle of 0°,channeling effects may occur. Such channeling effects, at the sameimplantation energy, may cause a variation of the implantation depth.The thinner the semiconductor layer in a MEMI process, the greater theimpact of channeling effects on a doping profile of the first and secondregions may be because the reduced thermal diffusion required with thinsemiconductor layers has the effect that the doping profile is verysimilar to the (varying) implantation profile.

There is therefore a need for an improved method for producing a driftregion of a superjunction device.

SUMMARY

One example relates to a method. The method includes forming a pluralityof semiconductor layers one on top of the other, implanting dopant atomsof a first doping type into each of the plurality of semiconductorlayers, thereby forming a plurality of first implanted regions in eachof the plurality of semiconductor layers, and implanting dopant atoms ofa second doping type into each of the plurality of semiconductor layers,thereby forming a plurality of second implanted regions in each of theplurality of semiconductor layers. Each of implanting the dopant atomsof the first doping type and implanting the dopant atoms of the seconddoping type into each of the plurality of semiconductor layers includesforming a respective implantation mask on a respective surface of eachof the plurality of semiconductor layers. Further, at least one offorming the first implanted regions and the second implanted regions inat least one of the plurality of semiconductor layers includes a tiltedimplantation process, wherein the tilted implantation process includesusing an implantation vector that is tilted by a tilt angle relative toa normal of the respective horizontal surface of the respectivesemiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Examples are explained below with reference to the drawings. Thedrawings serve to illustrate certain principles, so that only aspectsnecessary for understanding these principles are illustrated. Thedrawings are not to scale. In the drawings the same reference charactersdenote like features.

FIG. 1 is a flowchart that illustrates one example of a method forproducing a drift region of a superjunction device;

FIG. 2 illustrates doping profiles of doped regions generated based ondifferent types of implantation processes;

FIGS. 3A-3C show one example of a method for forming an implanted regionin a semiconductor layer using a tilted implantation process;

FIGS. 4A-4B show a modification of the method illustrated in FIGS.3A-3C;

FIGS. 5A-5C illustrate one example of a method for forming implantedregions of a first doping type and implanted regions of a second dopingtype in a semiconductor layer;

FIGS. 6-11 illustrates different examples of a semiconductor body havinga plurality of semiconductor layers, wherein each of the semiconductorlayers includes a plurality of implanted regions of the first dopingtype and implanted regions of the second doping type;

FIG. 12 shows the semiconductor according to one of FIGS. 6-11 after atemperature process;

FIG. 13 shows a vertical cross-sectional view of the semiconductor bodyafter forming transistor cells according to one example;

FIG. 14 shows a vertical cross sectional view of the semiconductor bodyafter forming transistor cells according to another example;

FIG. 15 shows a modification of the structure shown in FIG. 14 ; and

FIGS. 16A-16C illustrate sections of transistor devices and a fieldstrength of an electric field occurring in these transistor devices inan off-state.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings. The drawings form a part of the description andfor the purpose of illustration show examples of how the invention maybe used and implemented. It is to be understood that the features of thevarious embodiments described herein may be combined with each other,unless specifically noted otherwise.

FIG. 1 shows a flowchart that illustrates one example of a method forproducing a drift region of a superjunction device. This flowchartillustrates process steps (process sequences) of the method. It shouldbe noted that the order in which the individual process steps areillustrated in FIG. 1 from the top to the bottom of the flowchart doesnot necessarily represent the order in which these process sequences areperformed. Further, some of these process sequences may be performedseveral times.

Referring to step 301, the method includes forming a plurality ofsemiconductor layers one on top of the other. Forming each of thesesemiconductor layers may include an epitaxial growth process so that theplurality of semiconductor layers are epitaxially grown one on top ofthe other. A first one of the plurality of semiconductor layers may begrown on a semiconductor substrate. According to one example, each ofthe plurality of semiconductor layers is a monocrystalline semiconductorlayer such as, for example, a monocrystalline silicon (Si) layer, amonocrystalline silicon carbide (SiC) layer, a monocrystalline galliumarsenide (GaAs) layer, or a monocrystalline gallium nitride (GaN) layer.

Referring to steps 302 and 303, the method further includes implantingdopant atoms of a first doping type into each of the plurality ofsemiconductor layers, thereby forming a plurality of first implantedregions in each of the plurality of semiconductor layers, and implantingdopant atoms of a second doping type in each of the plurality ofsemiconductor layers, thereby forming a plurality of second implantedregions in each of the plurality of semiconductor layers. The seconddoping type (conductivity type) is complementary to the first dopingtype (conductivity type). The implanting processes according to steps302 and 303 take place after a respective one of the plurality ofsemiconductor layers has been formed and before a next one of theplurality of semiconductor layers is formed. According to one example,implanting the dopant atoms of the first doping type into the respectiveone of the plurality of semiconductor layers includes forming a firstimplantation mask on top of a surface of the respective semiconductorlayer and implanting the dopant atoms of the first doping type usingthis first implantation mask. Further, implanting the dopant atoms ofthe second doping type includes forming a second implantation mask thatis different from the first implantation mask on top of the surface ofthe respective semiconductor layer and using this second implantationmask in the implantation process.

Referring to step 304, at least one of forming the first implantedregions and the second implanted regions in at least one of theplurality of semiconductor layers comprises a tilted implantationprocess. According to one example, “a tilted implantation process”includes implanting the respective dopant atoms using an implantationvector that is tilted by a tilt angle relative to a normal of thesurface of the respective semiconductor layer. According to one example,the tilt angle is between 1° and 15°, in particular between 2° and 8°.The surface of a semiconductor layer into which the dopant atoms of thefirst and second doping type are implanted is referred to asimplantation surface in the following. An implantation process in whichthe tilt angle is essentially 0° is referred to a non-tiltedimplantation process in the following.

The tilted implantation process may help to avoid channeling effects.“Channeling” may occur when dopant atoms are implanted into amonocrystalline semiconductor layer in a crystallographic direction inwhich the atoms of the crystal lattice form a kind of channel so thatimplanted dopant atoms (dopant ions), at a given implantation energy,penetrate deeper into the semiconductor layer than in othercrystallographic directions. For example, channeling may occur whendopant atoms are implanted into a (100) surface of a monocrystallinesilicon semiconductor body using a non-tilted implantation process. Whenimplanting dopant atoms into a semiconductor layer in a direction inwhich channeling may occur, slight variations of the implantation angle,which inevitably occur, may cause variations of the implantationprofile. The “implantation profile” is the distribution of the implanteddopant atoms in the semiconductor layer along the implantationdirection. Those variations may include that, at a given implantationenergy and a given implantation dose, the position of a maximum of theimplantation profile relative to the implantation surface may vary orthat a distance over which the implantation profile extends in thesemiconductor layer may vary. The lower the implantation energy is, themore critical variations of the tilt angle will be with regard tovariations in the implantation profile.

In addition to an implantation process, forming a doped semiconductorregion in a semiconductor layer includes at least one temperatureprocess in which the implanted dopants are activated and (at leastslightly) diffuse in the semiconductor layer. The shorter thetemperature process is, the less diffusion will take place. Further, theless diffusion takes place, the better the implantation profilerepresents the doping profile. Thus, variations in the implantationprofile may result in variations of the doping profile. The “dopingprofile” is the distribution of the activated dopant atoms in thesemiconductor layer at the end of the whole processing sequence.

FIG. 2 illustrates implantation profiles of four different implantedregions generated based on an implantation process. More specifically,FIG. 2 illustrates the distribution of dopant atoms in a semiconductorlayer in a direction z perpendicular to an implantation surface for twodifferent types of dopant atoms, wherein two different implantationprocesses, a non-tilted implantation process and a tilted implantationprocess, have been performed for each type of dopant atoms. Theimplantation dose was the same in each of these implantation processes.The implantation energy was the same for each implantation process ofone species (type) of dopant atoms, but different for the differentspecies.

In FIG. 2 , curves 411 and 421 represent the doping profiles obtainedbased on the tilted implantation processes, wherein curve 421 representsthe doping profile of a doped region including first type dopant atomsand curve 411 represents the doping profile of a doped region includingsecond type dopant atoms. Further, curves 412 and 422 represent thedoping profiles obtained based on the non-tilted implantation processes,wherein curve 422 represents the doping profile of a doped regionincluding first type dopant atoms and curve 412 represents the dopingprofile of a doped region including second type dopant atoms. As can beseen from FIG. 2 , the non-tilted implantation process has the effectthat the dopant atoms penetrate deeper into the semiconductor layer andthe implanted region, in the vertical direction z, extends over a widerrange than in the tilted implantation process. The latter has the effectthat a maximum concentration of implanted atoms that is obtained basedon the non-tilted implantation process is lower than in the tiltedimplantation process. In other words, the implantation profiles obtainedbased on the tilted implantation process are narrower and have sharperedges.

The doping profiles shown in FIG. 2 have been obtained based onimplanting boron (B) atoms as second type dopant atoms and phosphorousatoms (P) as first type dopant atoms into a (100) surface of a silicon(Si) semiconductor layer using a tilt angle of 0° in the non-tiltedimplantation process and 7° in the tilted implantation process. This,however, is only an example. Similar results are obtained when usingother types of dopant atoms, other types of semiconductor layers, andother tilt angles in the tilted implantation process.

Summarizing the above, the risk of (unpredictable) variations in thedoping profile of a doped region increases as the implantation energydecreases and as the duration of the temperature process decreases. Onthe other hand, forming a drift region of a superjunction device with alow pitch may include producing relatively thin semiconductor layers oneon top of the other, implanting dopant atoms at a low implantationenergy into the individual semiconductor layers, and a short temperatureprocess. Further, in a superjunction device, there are at least somepositions of the drift region where unpredictable variations of thedoping profile are highly undesirable, especially if variations in thedoping profile of first and second species are not identical. A tiltedimplantation process may help to avoid or at least reduce suchvariations.

FIGS. 3A-3C illustrate one example of a tilted implantation process forforming a first implanted region 11 in a semiconductor layer 110. InFIGS. 3A-3C only one semiconductor layer 110 is shown which representsan arbitrary one of the plurality of semiconductor layers formed in themethod. Further, in FIGS. 3A-3C only one first implanted region 11 isshown. It goes without saying that a plurality of first implantedregions can be formed in the semiconductor layer 110 spaced apart fromeach other by the same implantation process. FIG. 3A shows a verticalcross-sectional view of the semiconductor layer 110 in a first sectionplane A-A, FIG. 3B shows a vertical cross-sectional view of thesemiconductor layer 110 in a second section plane B-B perpendicular tothe first section plane A-A, and FIG. 3C shows a top view of thesemiconductor layer 110. The first and second vertical section planesA-A, B-B are section planes perpendicular to a first surface 111 of thesemiconductor layer 110. This first surface 111 is the surface intowhich the dopant atoms are implanted and is referred to as implantationsurface 111 in the following. According to one example, thesemiconductor layer 110 is a monocrystalline silicon semiconductor layerand the implantation surface 111 is a (100) surface of the crystallattice of the monocrystalline semiconductor layer 110.

Referring to FIGS. 3A-3C, the tilted implantation process includesforming an implantation mask 201 on top of the implantation surface 111.The implantation mask 201 includes at least one opening 211 in which asection of the implantation surface 111 is uncovered. In theimplantation process, the first implanted region 11 is formed in thesemiconductor layer 110 below the opening 211 of the implantation mask201. In FIGS. 3A and 3B only one first implanted region 1 is shown. Aplurality of first implanted regions 1 can be formed by forming theimplantation mask 201 such that it includes a plurality of openings 211that are spaced apart from each other in a lateral direction of thesemiconductor layer 210. A “lateral direction” is a direction parallelto the implantation surface 111.

In the implantation process, a direction in which the dopant atoms areimplanted into the implantation surface 111 is given by an implantationvector S. In the tilted implantation process, the implantation vector Shas a vertical component S_(V) and a horizontal component S_(H). Thevertical component S_(V) is perpendicular to the implantation surface111 and, therefore, parallel to a normal of the implantation surface111. The horizontal component S_(H) is parallel to the implantationsurface 111 and, therefore, perpendicular to the normal of theimplantation surface 111. In the tilted implantation process, thehorizontal component S_(H) is different from zero. In a non-tiltedimplantation process (not illustrated in FIGS. 3A-3C), the horizontalcomponent S_(H) is essentially zero. The tilt angle c is the anglebetween the implantation vector S and the normal of the implantationsurface 111. Based on the vertical component S_(V) and the horizontalcomponent S_(H) of the implantation vector S the implantation angle α isgiven by

$\alpha = {\arctan{\frac{S_{H}}{S_{V}}.}}$The tilt angle α is different from 0° in the tilted implantation processand essentially 0° in the non-tilted implantation process.

According to one example, the opening 211 in the implantation mask 201is an elongated opening such that a length 1 of the opening 211 in afirst lateral direction x of the semiconductor layer 110 issignificantly greater than a width w of the opening 211 in a secondlateral direction y perpendicular to the first lateral direction x.According to one example, a ratio 1:w between the length and the widthof the opening 211 is at least 10:1, at least 100:1, or at least 1000:1.The first lateral direction x is also referred to as longitudinaldirection of the opening 211 in the following. According to one example,the implantation vector S is such that in the tilted implantationprocess the horizontal component S_(H) is essentially parallel to thelongitudinal direction x of the opening 211. This is in order to preventor at least widely prevent dopant atoms from being implanted into thesemiconductor layer 110 in regions that are below the implantation mask201 and into sidewalls of the implantation mask 201. Such implantationof dopant atoms into a region of the semiconductor layer 110 below theimplantation mask 201 may only occur at longitudinal ends of theopenings 211, where such implantation can be ignored.

According to one example, the tilt angle α is selected from between 1°and 15°, in particular from between 2° and 8°. According to one example,a thickness d of the semiconductor layer 110, which is a dimension ofthe semiconductor layer 110 in a direction perpendicular to theimplantation surface 111, is less than 2.5 micrometers (μm) or less than2 micrometers. According to one example, the thickness d is between 1.5micrometers and 2 micrometers.

The implantation energy is dependent on the thickness d of thesemiconductor layer 110 and the type of dopant atoms that are implanted.Basically, the thicker the semiconductor layer 110, the higher theimplantation energy. Further, the lighter the implanted dopant atomsare, the lower the implantation energy will be. According to oneexample, the implanted dopant atoms are boron (B) atoms, which arep-type dopants in silicon, and the implantation energy is selected frombetween 50 keV and 300 keV. According to another example, the implanteddopant atoms are phosphorous (P) atoms, which are n-type dopants insilicon, and the implantation energy is selected from between 100 keVand 600 keV. According to one example, the implantation dose is selectedfrom between 2E12 cm⁻² and 5E13 cm⁻².

According to one example illustrated in FIGS. 4A and 4B, the tiltedimplantation process includes two implantation sub-processes, a firstsub-process using a first implantation vector S1 and a secondsub-process using a second implantation vector S2. Each of thesesub-processes can be in accordance with the method explained withreference to FIGS. 3A-3C, wherein the two sub-processes are differentfrom each other in that a horizontal component S1 _(H) of the firstimplantation vector S1 in the first sub-process and the horizontalcomponent S2 _(H) of the implantation vector S2 in the secondsub-process have opposite directions, wherein each of these directionsmay be parallel to the longitudinal direction of the opening 211 in theimplantation mask 201. According to one example, the horizontalcomponent S1 _(H) of the first implantation vector S1 and the horizontalcomponent S2 _(H) of the second implantation vector S2 have essentiallythe same absolute value (but opposite directions) and verticalcomponents S1 _(V), S2 _(V) of the first and second implantation vectorsS1, S2 have essentially the same absolute value (and essentially thesame direction). In this case, a first tilt angle α1 in the firstsub-process illustrated in FIG. 4A and a second tilt angle α2 in thesecond sub-process shown in FIG. 4B have the same absolute value butdifferent signs, that is, α1=−α2. “Essentially” in this context meansthat each of the two values that are essentially the same deviates lessthan 5% or even less than 1% from an average of the two values.

In the tilted implantation process illustrated in FIGS. 4A and 4B, afirst portion 11′ of the first implanted region is produced in the firstsub-process shown in FIG. 4A and the first implanted region 11 isfinished by the second sub-process shown in FIG. 4B.

Having an implantation mask 200 with an elongated opening 210 in orderto form an elongated implanted region 11 is only an example. The openingin the implantation mask may have any form that is adapted to thedesired form of the implanted region. According to one example, theimplantation process includes more than two sub-processes. Theimplantation process may include four sub-processes, wherein theimplantation vectors used in these four implantation processes may havethe same absolute value and the same vertical components, but distincthorizontal components. According to one example, the horizontalcomponents are selected such that an angle between each pair of thesehorizontal components is 90° or a multiple of 90°.

According to one example, one implantation process or implantationsub-process may include two or more different implantations using thesame implantation angle, but different implantation energies. Accordingto another example, one implantation process or implantation sub-processmay include two or more different implantations using the same energy ordifferent energies and different implantation angles, so that one ofthese implantations can be a non-tilted implantation and at least onefurther implantation can be a tilted implantation.

Referring to the above, a plurality of first implanted regions 11 can beformed in one tilted implantation process. This is illustrated in FIG.5A that shows a vertical cross-sectional view of the semiconductor layer110 in the second vertical section plane B-B. In this example, theimplantation mask 201 includes a plurality of openings 211 (wherein onlytwo openings 211 are shown in FIG. 5A) that are spaced apart from eachother in the second lateral direction y. According to one example, eachof these openings 211 is an elongated opening of the type explained withreference to FIGS. 3A-3C. The implantation process illustrated in FIG.5A is a tilted implantation process of any of the types explainedhereinbefore, wherein in FIG. 5A only the vertical component S_(V) ofthe implantation vector is illustrated. The tilted implantation processillustrated in FIG. 5A may include any of the tilted implantationprocesses illustrated in FIGS. 3A-3C or 4A and 4B.

Referring to the above, a plurality of first implanted regions 11 thateach include dopant atoms of the first doping type and a plurality ofsecond implanted regions 21 that each include dopant atoms of a seconddoping type complementary to the first doping type may be produced inthe same semiconductor layer 110. FIG. 5B shows a verticalcross-sectional view of the semiconductor layer 110 in a second tiltedimplantation process in which a plurality of second implanted regions 21are formed in the semiconductor layer 110. Forming these secondimplanted regions 21 includes forming a second implantation mask 202 ontop of the implantation surface 111 of the semiconductor layer 110. Thissecond implantation mask 202 includes a plurality of openings 212 inwhich the implantation surface 111 is uncovered. Theses openings 212 maybe elongated openings of the type explained with reference to FIGS.3A-3C. Further, a position of these openings 212 may be selected suchthat the first implanted regions 11 and the second implanted regions 21are spaced apart from each other in the second lateral direction y.Everything else explained with regard to the tilted implantation processthat forms the first implanted regions 11 applies to the second tiltedimplantation process that forms the second implanted regions 21equivalently. According to one example, the implantation vector is thesame in the first implantation process and the second implantationprocess.

FIG. 5C shows a horizontal cross-sectional view of the semiconductorlayer 110 in a horizontal section plane D-D after the second tiltedimplantation process. In this example, the first implanted regions 11and the second implanted regions 21 are elongated regions that areessentially parallel to each other. This structure can be obtained byimplementing the first and second implantation mask such that theopenings 211 in the first implantation mask 201 used in the firstimplantation process and the openings 212 in the second implantationmask 202 used in the second implantation process are elongated openingsthat have the same longitudinal direction.

The semiconductor layer 110 in which the first implanted regions 11 andthe second implanted regions 21 are formed can be undoped (notintentionally doped) or can have a basic dopant concentration of one ofthe first and second doping types. “Undoped” means that a dopingconcentration of the semiconductor layer 110 is less than

1E14 (=10¹⁴) cm⁻³. A basic doping concentration of the semiconductorlayer 110 can be produced during an epitaxial growth process in whichthe semiconductor layer 110 is produced.

Referring to FIG. 1 , the method includes forming a plurality ofsemiconductor layers one on top of the other and forming a plurality offirst implanted regions and a plurality of second implanted regions ineach of the plurality of semiconductor layers. FIG. 6 shows a horizontalcross-sectional view of a semiconductor arrangement that includes aplurality of semiconductor layers 110 ₁-110 _(n) formed one on top ofthe other, wherein a plurality of first implanted regions 11 and aplurality of second implanted regions 21 have been formed in each ofthese semiconductor layers 110 ₁-110 _(n). According to one example, atilted implantation process is used to form the first implanted regions11 and the second implanted regions 21 in each of the plurality ofsemiconductor layers 110 ₁-110 _(n), wherein the tilted implantationprocess can be any type of tilted implantation process explained withreference to FIGS. 3A-3C, 4A and 4C and 5A-5B herein before. Accordingto one example, the first implanted regions 11 and the second implantedregions 21 in the plurality of semiconductor layers 110 ₁-110 _(n) areproduced such that in the overall semiconductor arrangement 100 aplurality of first implanted regions 11 are formed one on top of theother in a vertical direction of the semiconductor arrangement 100 and aplurality of second implanted regions 21 are formed one on top of theother in the vertical direction of the semiconductor arrangement 100.The “vertical direction of the semiconductor arrangement 100” is adirection perpendicular to a first surface 101 of the semiconductorarrangement 100. The first surface 101, according to one example, is theimplantation surface 111 _(n) of an uppermost semiconductor layer 110_(n). The “uppermost semiconductor layer 110 _(n)” is the semiconductorlayer manufactured last in the manufacturing process.

According to one example, a lowermost semiconductor layer 110 ₁, whichis the semiconductor layer manufactured first in the manufacturingprocess, is formed on top of a carrier 120. According to one example,the lowermost semiconductor layer, which is also referred to as firstsemiconductor layer 110 ₁ in the following, is epitaxially grown on amonocrystalline semiconductor carrier 120. A second semiconductor layer110 ₂, after forming the first and second implanted regions 11, 21 inthe first semiconductor layer 110 ₁, is epitaxially grown on the firstsemiconductor layer 110 ₁, a third semiconductor layer 110 ₃, afterforming the first and second implanted regions 11, 21 in the secondsemiconductor layer 110 ₂ is epitaxially grown on the secondsemiconductor layer 110 ₂, and so on. According to one example, thecarrier 120 is a semiconductor substrate with an essentially homogenousbasic doping of the first doping type. The doping concentration ishigher than 1E18 cm⁻³, for example.

According to another example illustrated in dashed lines in FIG. 6 , thecarrier 120 includes a substrate 121 of the first doping type with adoping concentration of higher than 1E18 cm⁻³ and a buffer layer 122 ofthe first doping type formed on the substrate 121 and having a dopingconcentration lower than the doping concentration of the substrate 121.The buffer layer 122 may include one or more epitaxial layers grown onthe substrate.

According to one example, the doping concentration of the buffer layer122 is between 1E15 cm⁻³ and 1E18 cm⁻³, in particular, between 1E15 cm⁻³and 1E16 cm⁻³. According to one example, the buffer layer 122 includestwo epitaxial layers, a first epitaxial layer grown on the substrate 121and having a first doping concentration, and a second epitaxial layergrown on the a first epitaxial layer and having a second dopingconcentration lower than the first doping concentration. According toone example, a thickness of the buffer layer 122, which is the dimensionof the buffer layer 122 in a direction facing away from the substrate121, is between 5 micrometers and 25 micrometers, in particular, between10 micrometers and 20 micrometers. The buffer layer 122 can be in-situdoped during the at least one epitaxial growth process performed to formthe buffer layer 122. Alternatively, dopant atoms of the first dopingtype are implanted into the at least one epitaxial layer forming thebuffer layer 122 all over the surface of the at least one epitaxiallayer surface. In the latter case, the doping concentration of thebuffer layer 122 is obtained after a temperature process that activatesand diffuses the implanted dopant atoms. This temperature process may bethe same temperature process that activates and diffuses the dopantatoms in the epitaxial layers 110 ₁-110 _(N) formed on the carrier 120,so that this temperature process may take place after theses epitaxiallayers 110 ₁-110 _(N) have been formed.

According to one example, each of the plurality of semiconductor layers110 ₁-110 _(n) formed on the carrier 120 is produced such that it isundoped (not intentionally doped). According to another example, a groupof lowermost semiconductor layers have a basic doping of the firstdoping type and the remainder of the plurality of semiconductor layersare produced to be undoped. According to one example, the dopingconcentration of the basic doping is selected from the same range as thedoping concentration of the buffer layer 122. The “group of lowermostsemiconductor layers” at least includes the lowermost semiconductorlayer 110 ₁ and may include one further semiconductor layer 110 ₂ formedon top of the lowermost layer 110 ₁ or several further semiconductorlayers formed one on top of the other on the uppermost layer 110 ₁.

According to one example, the at least one lowermost semiconductor layerthat is formed to have a basic doping has a thickness that is greaterthan the thicknesses of the remainder of the plurality of semiconductorlayers. According to one example, the at least one lowermostsemiconductor layer is thicker than 2.5 micrometers and the remainder ofthe plurality of semiconductor layers have a thickness less than 2.5micrometers, in particular less than 2 micrometers. According to oneexample, only the lowermost semiconductor layer 110 ₁ is formed to havea basic doping.

In the example illustrated in FIG. 6 , the first implanted regions 11and the second implanted regions 21 in each of the plurality ofsemiconductor layers 110 ₁-110 _(n) have been produced using a tiltedimplantation process. This, however, is only an example According tofurther examples explained in the following at least some of the firstimplanted regions and the second implanted regions produced in theoverall semiconductor arrangement 100 can be produced using a non-tiltedimplantation process. In the drawings explained below, referencecharacter 11 denotes a first implanted region produced using a tiltedimplantation process, reference character 12 denotes a first implantedregion produced using a non-tilted implantation process, referencecharacter 21 denotes a second implanted region produced using a tiltedimplantation process, and reference character 22 denotes a secondimplanted region produced using a non-tilted implantation process.

FIG. 7 shows a semiconductor arrangement 100 that is different from thesemiconductor arrangement shown in FIG. 6 in that each of the secondimplanted regions 22 in each of the semiconductor layers 110 ₁-110 _(n)has been produced using a non-tilted implantation process while thefirst implanted regions 11 in each of the plurality of semiconductorlayers 110 ₁-110 _(n) has been produced using a tilted implantationprocess.

FIG. 8 shows a further modification of the semiconductor arrangement 100shown in FIG. 6 . The arrangement 100 shown in FIG. 8 is different fromthe arrangement shown in FIG. 6 in that the first implanted regions 12in each of the plurality of semiconductor layers 110 ₁-110 _(n) areimplanted regions produced using a non-tilted implantation process whilethe second implanted regions 12 in each of the plurality ofsemiconductor layers 110 ₁-110 _(n) are implanted regions produced usinga tilted implantation process.

According to another example, the first implanted regions and/or thesecond implanted regions in only one or several of the semiconductorlayers 110 ₁-110 _(n) are produced using a tilted implantation processwhile first implanted regions and/or second implanted regions in theremainder of the plurality of semiconductor layers 110 ₁-110 _(n) areproduced using a non-tilted implantation process.

FIG. 9 shows one example of an arrangement that includes a first groupof semiconductor layers in which the first implanted regions 12 and thesecond implanted regions 22 are implanted regions produced using anon-tilted implantation process. In a second group of semiconductorlayers the first implanted regions 11 and the second implanted regions12 are implanted regions produced using a tilted implantation process.According to one example, the first group of semiconductor layersincludes the first semiconductor layer 110 ₁ and at least one furtherlayer, wherein the semiconductor layers 110 ₁-110 ₃ of the first groupare formed one on top of the other. Equivalently, the semiconductorlayers of the second group include the uppermost semiconductor layer 110_(n) and the semiconductor layers of the second group are formed one ontop of the other.

According to another example shown in FIG. 10 , the first implantedregions 11 and the second implanted regions 21 of only the firstsemiconductor layer 110 ₁ are implanted regions produced using a tiltedimplantation process and the first implanted regions 12 and the secondimplanted regions 22 produced in the remainder of the semiconductorlayers 110 ₂-110 _(N) are implanted regions produced using a non-tiltedimplantation process.

FIG. 11 shows a further example of a semiconductor arrangement 100. Inthis example, only the second implanted regions 21 formed in theuppermost semiconductor layer 110 _(N) are implanted regions producedusing a tilted implantation process and the second implanted regions 22in each of the other semiconductor layers 110 ₁-110 _(N-1) and each ofthe first implanted regions 12 are implanted regions produced using anon-tilted implantation process. According to another example (notshown), the second implanted regions and the first implanted regions inonly the uppermost semiconductor layer 110 _(N) are implanted regionsproduced using a tilted implantation process, while the second implantedregions and the first implanted regions in each of the othersemiconductor layers 110 ₁-110 _(N-1) are implanted regions producedusing a non-tilted implantation process.

According to yet another example, only the second implanted regions 22of the uppermost semiconductor layer 110 _(N) are implanted regionsproduced using a non-tilted implantation process, all other implantedregions 21, 22 are implanted regions produced using a tiltedimplantation process.

The semiconductor arrangement with the substrate 120 and plurality ofsemiconductor layers 110 ₁-110 _(n) is a monocrystalline semiconductorarrangement. That is, based on the crystalline structure of thesemiconductor arrangement 100 the substrate 120 and the semiconductorlayers 110 ₁-110 _(n) cannot be detected. In other words, there is novisible border or interface between the substrate 120 and the individualsemiconductor layers 110 ₁-110 _(n). Nevertheless, for the purpose ofillustration and explanation, a border between the substrate 120 and thesemiconductor layers 110 ₁-110 _(n) is illustrated by solid horizontallines in FIGS. 6-11 .

In addition to the implantation processes explained hereinbefore,forming a drift region of a superjunction transistor device includes atemperature process in which the implanted dopant atoms are activatedand (slightly) diffuse in the semiconductor layers 110 ₁-110 _(n).According to one example, a temperature in the temperature process ishigher than 1000° C., such as, for example, between 1050° C. and 1100°C. and a duration of the plateau phase (which is when the temperature ishigher than 1000° C.) is longer than 10 minutes such as, for examplebetween 15 minutes and 90 minutes. The temperatures process may takeplace in an oxidizing atmosphere or an inert atmosphere. According toone example, the temperature process is a furnace process.

FIG. 12 shows a vertical cross-sectional view of the semiconductorarrangement 100 explained hereinbefore after such temperature process.Due to the diffusion of the implanted dopant atoms in the temperatureprocess, a plurality of first regions 1 and second regions 2 are formed.Each of these first regions 1 and second regions 2 extends in thevertical direction of the semiconductor arrangement 100 across thesemiconductor layers 110 ₁-110 _(n). In horizontal directions, the firstregions 1 and the second regions 2 may adjoin each other. According toanother example (not shown) undoped section or sections having the basicdoping concentration of the semiconductor layers 110 ₁-110 _(n) mayremain between neighboring first and second regions 1, 2. The firstregions 1 are doped regions of the first doping type and result from thefirst implanted regions 11 and/or 12 and the second regions 2 are dopedregions of the second doping type and result from the second implantedregions 21 and/or 22.

FIG. 13 shows a vertical cross-sectional view of a superjunctiontransistor device that includes a drift region with a plurality of firstregions 1 and a plurality of second regions 2 as explained withreference to FIG. 12 . In this superjunction transistor device, thecarrier 120 or the substrate 121 (when the carrier includes a substrate121 and a buffer layer 122) forms a drain region of the transistordevice. The drain region is connected to a drain node D or forms a drainnode D of the transistor device, wherein the drain node is onlyschematically illustrated in FIG. 13 . The doping concentration of thedrain region 120 is selected from a range of between 1E17 (=10¹⁷) cm⁻³and 1E20 cm⁻³, for example.

In the temperature process, dopant atoms from first and second implantedregions in the lowermost semiconductor layer 110 ₁ may diffuse into theoptional buffer layer 122. The buffer layer 122, however, is thickenough so that sections having the basic doping of the buffer layerremain between the first and second regions 1, 2 and the substrate 121after the temperature process. Referring to the above, the lowermostsemiconductor layer 110 ₁ can be formed to have a basic doping of thefirst doping type and can be formed thicker than the remainder of thesemiconductor layers. In this case, at the end of the temperatureprocess, sections of the lowermost semiconductor layer 110 ₁ may remainthat have the basic doping of the first semiconductor layer 110 ₁. Thosesections adjoin the carrier 120 and form a buffer layer of the firstdoping type. Thus, a buffer layer of the transistor device may be formedby a buffer layer 122 formed on the substrate 121 before forming thesemiconductor layers 110 ₁-110 _(N), by a section of the lowermostsemiconductor layer 110 ₁, or by both.

In addition to the drain region 120 and the drift region with the firstregions 1 and the second regions 2 the transistor device includes acontrol structure with a plurality of control cells 3, which may also bereferred to as transistor cells. Each of these transistor cells 3includes a body region 31 of the second doping type, a source region 32of the first doping type, a gate electrode 33, and a gate dielectric 34.The gate dielectric 34 dielectrically insulates that gate electrode 33from the body region 31. The body region 31 of each transistor cell 3separates the respective source region 32 of the transistor cell 3 fromat least one of the plurality of first regions 1. The source region 32and the body region 31 of each of the plurality of transistor cells 3 iselectrically connected to a source node S (which is only schematicallyillustrated in FIG. 13 ). “Electrically connected” in this context meansohmically connected. That is, there is no rectifying junction betweenthe source node S and the source region 32 and the body region 31.Electrical connections between the source node S and the source region32 and the body region 31 of the individual transistor cells 3 are onlyschematically illustrated in FIG. 13 . The gate electrode 33 of eachtransistor cell 3 is electrically connected to a gate node G (which isonly schematically illustrated in FIG. 13 ).

Because the body regions 31 are of the second doping type and the firstregion 1 is of the first doping type there is a pn-junction between thebody region 31 of each transistor cell 30 and the first region 1adjoining the respective body region 31. Further, a pn-junction isformed between each first region 1 and an adjoining second region 2.

The body and source regions 31, 32 of the individual transistor cellscan be formed conventional implantation and/or diffusion processes. Suchprocesses for forming transistor cells of a transistor device arecommonly known so that no further explanations are required in thisregard. Forming the body and source regions 31, 32 may include atemperature process that activates dopant atoms introduced into thesemiconductor body. According to one example, this temperature processis also used to activate the dopant atoms in the implanted first regions11 and/or 12 and the dopant atoms in the implanted second regions 21and/or 22, so that the first regions 1 and the second regions 2 areformed based on the first and second implanted regions after dopantatoms forming the body and source regions 31, 32 have been implanted.

The body and source regions 31, 32 may be produced in the uppermostsemiconductor layer 110 _(N) explained above. According to anotherexample (not shown), a further semiconductor layer is grown on theuppermost layer 110 _(N) and the body and source regions 31, 32 areformed in this further semiconductor layer. The further semiconductorlayer may have a basic doping concentration of the first doping type,wherein this basic doping concentration may be in-situ formed during anepitaxial growth process of the further semiconductor layer.

In the example shown in FIG. 13 , the gate electrode 33 of eachtransistor cell 3 is a planar electrode arranged on top of the firstsurface 101 of the semiconductor body 100 and dielectrically insulatedfrom the semiconductor body 100 by the gate dielectric 34. In thisexample, sections of the first regions 21, adjacent the individual bodyregions 31, extend to the first surface 101.

FIG. 14 shows transistor cells according to another example, wherein inFIG. 14 only a section of the semiconductor body 100 close to thesurface 101 is shown, which is the section in which the transistor cells3 are implemented. The transistor cells shown in FIG. 14 are differentfrom the transistor cells shown in FIG. 13 in that the gate electrode 33of each transistor cell 3 is a trench electrode that extends from thefirst surface 101 into the semiconductor body 100. Like in the exampleshown in FIG. 13 , a gate dielectric 34 dielectrically insulates thegate electrode 33 from the respective body region 31. The body region 31and the source region 32 of each transistor cell 3 are electricallyconnected to the source node S. Further, the body region 31 adjoins atleast one first region 21 and forms a pn-junction with the respectivefirst region 21.

In the examples shown in FIGS. 13 and 14 , the transistor cells 3 eachinclude one gate electrode 33, wherein the gate electrode 33 of eachtransistor cell 3 is configured to control a conducting channel betweenthe source region 32 of the respective transistor cell 3 and one firstregion 21, so that each transistor cell 3 is associated with one firstregion 1. Further, as shown in FIGS. 13 and 14 , the body region 31 ofeach transistor cell 3 adjoins at least one second region 2, so that theat least one second region 2 is electrically connected to the sourcenode S via the body region 31 of the transistor cell 3. Just for thepurpose of illustration, in the examples shown in FIGS. 13 and 14 , thebody region 31 of each transistor cell 3 adjoins one second region 2 sothat each transistor cell 3 is associated with one second region 2.

According to one example, a doping concentration of the source regions32 is selected from a range of between 1E18 cm⁻³ and 1E21 cm⁻³, and adoping concentration of the body regions 31 is selected from a range ofbetween 1E16 cm⁻³ and 5E18 cm⁻³. The gate electrodes 33 may includedoped polysilicon, a metal, or the like.

Associating one transistor cell 3 of the plurality of control cells withone first region 1 and one second region 2, as illustrated in FIGS. 13and 14 , is only an example. The implementation and the arrangement ofthe transistor cells 3 widely independent of the specific implementationand arrangement of the first regions 1 and the second regions 2.

One example illustrating that the implementation and arrangement of thetransistor cells 3 are widely independent of the implementation andarrangement of the first and second regions 1, 2 is shown in FIG. 15 ,which illustrates a superjunction transistor device according to afurther example. In this example, the first regions 1 and the secondregions 2 are elongated in the first lateral direction x of thesemiconductor body 100, while the source regions 32, the body regions31, and the gate electrodes 33 of the individual transistor cells 3 areelongated in the second lateral direction y. In this example, the bodyregion 31 of one transistor cell 3 adjoins a plurality of first regions1 and second regions 2.

In the example shown in FIG. 15 , the transistor cells are elongatedtransistor cells. That is, the body and source regions 31, 32 areelongated regions in a horizontal direction of the semiconductor body100. This, however, is only an example. Other the transistor device maybe implemented with other types of transistor cells such as polygonalcells as well.

Optionally, in the examples shown in FIGS. 14 and 15 , the transistordevice may include field electrodes (not shown) that are dielectricallyinsulated from the semiconductor body 100 by field electrodedielectrics, and connected to the source node S or the gate node G.According to one example, each of these field electrodes is locatedbelow a respective gate electrode 33 in the same trench as the gateelectrode 33.

The functionality of a transistor device of the type explained hereinabove is explained below. The transistor device can be operated in aforward biased state and a reverse biased state. Whether the device isin the forward biased state or the reverse biased state is dependent ona polarity of a drain-source voltage Vim, which is a voltage between thedrain node D and the source node S. In the reverse biased state thepolarity of the drain-source voltage Vim is such that the pn-junctionsbetween the body regions 31 and the first regions 1 of the drift regionare forward biased, so that in this operation state the transistordevice conducts a current independent of an operation state of thecontrol structure 3. In the forward biased state, the polarity of thedrain-source V_(DS) is such that the pn-junctions between the bodyregions 31 and the first regions 1 are reverse biased. In this forwardbiased state, the transistor device can be operated in an on-state or anoff-state by the transistor cells 3. In the on-state, the transistorcells 3 generate a conducting channel between the source node S and thefirst regions 1, and in the off-state this conducting channel isinterrupted. More specifically, referring to FIGS. 13 and 14 , in theon-state there are conducting channels in the body regions 31 betweenthe source regions 32 and the first regions 1 controlled by the gateelectrodes 33. In the off-state, these conducting channels areinterrupted. The gate electrodes 33 are controlled by a gate-sourcevoltage V_(GS), which is a voltage between the gate node G and thesource node S.

The transistor device can be implemented as an n-type transistor deviceor as a p-type transistor device. In an n-type transistor device, thefirst doping type, which is the doping type of the first regions 1, thesource regions 32, and the drain region 120 is an n-type and the seconddoping type, which is the doping type of the second regions 2 and thebody regions 31, is a p-type. In a p-type transistor device, the dopingtypes of the device regions mentioned before are complementary to thedoping types of the respective device regions in an n-type transistordevice. An n-type transistor device, for example, is in the forwardbiased state if the drain-source voltage V_(DS) is a positive voltage.Furthermore, an n-type transistor device is in the on-state if thegate-source voltage V_(GS) is positive and higher than a thresholdvoltage of the transistor device.

When the transistor device is in the on-state and forward biased, acurrent flows from the source node S via the conducting channels in thebody regions 31 along the gate dielectrics 34 into the first regions 1and in the first regions 1, in the vertical direction of thesemiconductor body 100, to the drain region 120. When the transistordevice is in the off-state and reverse biased, space charge regions(depletion regions) expand in the first and second regions 1, 2 of thedrift region.

Referring to the above, channeling effects that may occur in anon-tilted implantation process may cause a variation of theimplantation depth, wherein such variation in the implantation depth maycause variations of a resulting doping profile (after the temperatureprocess). In a superjunction device, for example, it is desirable forthe first and second regions 1, 2 to have essentially the same dopingprofile in those sections that face the carrier 120. More specifically,it is desirable for the first and second regions 1, 2 to end atessentially the same vertical position in the buffer region 122. This isillustrated in FIG. 16A that shows an enlarged view of a section of afirst region 1, a section of an adjoining second region 2 and a sectionof the buffer layer 122. In this example, the first and second regions1, 2 end at the same vertical position of the semiconductor body 100,that is, they have the same distance to the substrate 121. In thehorizontal direction, the first and second regions 1, 2 may overlap (asillustrated). A profile of the first and second regions 1, 2 as shown inFIG. 16A may be obtained by forming the first and second implantedregions at least in the lowermost semiconductor layer 110 ₁ using atilted implantation process.

FIG. 16B shows an example in which the first region 1 extends farther inthe direction of the substrate than the second region 2. This may resultfrom variations in the implantation depth due to channeling. That is, aprofile as shown in FIG. 16B may be obtained when the implanted regionsin the lowermost layer 110 ₁ are formed using a non-tilted implantationprocess.

FIG. 16C schematically illustrates the electric fields that may occur inthe device section show in FIGS. 16A and 16B when the transistor deviceis in the off-state and a voltage is applied that reverse biases thepn-junction between the first and second regions 1, 2 and between thesecond region and the buffer region 122, wherein curve 201 shown in FIG.16C illustrates the field strength of an electric field associated withthe device section shown in FIG. 16A and curve 202 shown in FIG. 16Cillustrates the electric field associated with the device section shownin FIG. 16B. As can be seen from FIG. 16C, due to the compensationeffect, the electric field is essentially constant or slightly decreasesor increases in those sections where the first and second regions 1, 2adjoin each other. In the buffer region 122, the electric fielddecreases, wherein the electric field decreases faster in the exampleshown in FIG. 16B, in which a section of the first region 1 extendsdeeper into the buffer region 122 than into the first region 1. Thefaster decrease of the electric field in this example is due to the factthat the section of the first region 1 extending into the buffer region122 has a higher doping concentration than the buffer region 122.

A voltage blocking capability of the transistor device is the integralof the field strength of the electric field when a voltage is appliedthat causes the field strength, at one position of the transistordevice, to reach a critical value (usually referred to as critical fieldstrength). In other words, the voltage blocking capability isproportional to an area below the curve illustrating the field strength.As can be seen in FIG. 16C, this area is smaller in the case of theexample shown in FIG. 16B than in the case of the example shown in FIG.16A, so that the device illustrated in FIG. 16B has a lower voltageblocking capability than the device shown in FIG. 16A. Thus, forming theimplanted regions in the lowermost semiconductor layer using a tiltedimplant may help to increase the voltage blocking capability or may helpto avoid undesirable variations in the voltage blocking capability.

When the transistor device is in the off-state, dopant atoms in thefirst and second regions 1, 2 are ionized so that charge carriers are“stored” in these regions. When the transistor device switches from theoff-state to the on-state, these charge carriers have to be removedbefore the transistor device can conduct a current. Switching losses,which are losses associated with switching on and switching off thetransistor device, can be reduced by providing a low resistance betweenthe second regions 2 and the source node S. Such low resistance, interalia, can be obtained by providing a relatively high dopingconcentration of the second regions 2 in those sections where theyadjoin the body regions 31. This can be obtained by forming the secondimplanted regions at least in the uppermost semiconductor layer 110_(N), in which also the body regions 31 are formed, using a tiltedimplantation process. Thus, it may be helpful to at least form thesecond implanted regions in the uppermost semiconductor layer 110 _(N)using a tilted implantation process. While the invention has beendescribed with reference to illustrative examples, this description isnot intended to be construed in a limiting sense.

Although the present disclosure is not so limited, the followingnumbered examples demonstrate one or more aspects of the disclosure.

Example 1. A method, including: forming a plurality of semiconductorlayers one above the other; implanting dopant atoms of a first dopingtype into each of the plurality of semiconductor layers, thereby forminga plurality of first implanted regions in each of the plurality ofsemiconductor layers; implanting dopant atoms of a second doping typeinto each of the plurality of semiconductor layers, thereby forming aplurality of second implanted regions in each of the plurality ofsemiconductor layers; wherein each of implanting the dopant atoms of thefirst doping type and implanting the dopant atoms of the second dopingtype into each of the plurality of semiconductor layers includes forminga respective implantation mask on a respective surface of each of theplurality of semiconductor layers, wherein at least one of forming thefirst implanted regions and the second implanted regions in at least oneof the plurality of semiconductor layers includes a tilted implantationprocess, and wherein the tilted implantation process includes using animplantation vector that is tilted by a tilt angle relative to a normalof the respective horizontal surface of the respective semiconductorlayer.

Example 2. The method of example 1, wherein the tilt angle is between 1°and 15° or between 2° and 8°.

Example 3. The method of any combination of examples 1 to 2, wherein theimplantation vector has a horizontal vector component and a verticalvector component, wherein the implantation mask includes a plurality ofelongated mask openings, and wherein the implantation vector is suchthat the horizontal vector component is at least approximately parallelto a longitudinal direction of the elongated mask openings.

Example 4. The method of any combination of examples 1 to 3, wherein thetilted implantation process includes a first implantation process usinga first implantation vector and a second implantation process using asecond implantation vector, wherein each of the first implantationvector and the second implantation vector has a horizontal vectorcomponent and a vertical vector component, wherein the vertical vectorcomponents of the first and second implantation vectors are essentiallyidentical, and wherein the horizontal vector components of the first andsecond implantation vectors show in opposite directions.

Example 5. The method of any combination of examples 1 to 4, wherein theplurality of semiconductor layers include between 12 and 30semiconductor layers.

Example 6. The method of any combination of examples 1 to 5, whereinmore than 80% of the plurality of semiconductor layers each have athickness of less than 2.5 micrometers, 2.0 micrometers, or less than1.5 micrometers.

Example 7. The method of any combination of examples 1 to 6, whereineach of the plurality of semiconductor layers, before implanting thedopant atoms of the first type and the second type is undoped.

Example 8. The method of any combination of examples 1 to 7, whereinforming the plurality of semiconductor layers one above the otherincludes: forming one or more lowermost layers of the plurality ofsemiconductor layers on a semiconductor substrate, and forming theremainder of the plurality of semiconductor layers one above the otheron the one or more lowermost layers.

Example 9. The method of any combination of examples 1 to 8, whereineach of the remainder of the plurality of semiconductor layers has athickness of less than 2.5 micrometers, 2.0 micrometers, or less than1.5 micrometers.

Example 10. The method of any combination of examples 1 to 9, whereinthe one or more lowermost layers include a basic doping of the firstdoping type, and wherein each of the remainder of the plurality ofsemiconductor layers is undoped.

Example 11. The method of any combination of examples 1 to 10, whereinforming one of the first implanted regions and the second implantedregions in each of the plurality of semiconductor layers includes atilted implantation process, and wherein forming the other one of thefirst implanted regions and the second implanted regions in each of theplurality of semiconductor layers includes a non-tilted implantationprocess.

Example 12. The method of any combination of examples 1 to 10, whereinforming the first implanted regions and the second implanted regions inat least one of the plurality of semiconductor layers includes anon-tilted implantation process, and wherein forming the first implantedregions and the second implanted regions in the remainder of theplurality of semiconductor layers includes a tilted implantationprocess.

Example 13. The method of any combination of examples 1 to 12, whereinthe at least one of the plurality of semiconductor layers includes alowermost one of the plurality of semiconductor layers.

Example 14. The method of any combination of examples 1 to 13, whereinthe at least one of the plurality of semiconductor layers includes anuppermost one of the plurality of semiconductor layers.

Example 15. The method of any combination of examples 1 to 14, whereinthe at least one of the plurality of semiconductor layers includes twoor more semiconductor layers formed one above the other of the pluralityof semiconductor layers.

Example 16. The method of any combination of examples 1 to 15, whereinforming the second implanted regions in a group of semiconductor layersof the plurality of semiconductor layers includes a non-tiltedimplantation process, wherein forming the second implanted regions inthe remainder of the plurality of semiconductor layers includes a tiltedimplantation process, and wherein the group of semiconductor layers atleast includes an uppermost semiconductor layer.

Example 17. The method of example 16, wherein forming the firstimplanted regions (11, 12) in the group of semiconductor layerscomprises a tilted implantation process or a non-tilted implantationprocess.

Example 18. The method of any combination of examples 1 to 17, furtherincluding: a temperature process to diffuse the first type dopant atomsand the second type dopant atoms.

Example 19. The method of any combination of examples 1 to 18, furtherincluding: forming a plurality of transistor cells in an uppermost oneof the plurality of semiconductor layers.

Example 20. The method of any combination of examples 1 to 19, furtherincluding: forming a further semiconductor layer on an uppermost one ofthe plurality of semiconductor layers; and forming a plurality oftransistor cells in the further semiconductor layer.

Example 21. The method of any combination of examples 1 to 20, whereinforming the plurality of semiconductor layers one above the otherincludes epitaxially growing the plurality of semiconductor layers oneabove the other on a carrier.

Example 22. The method of any combination of examples 1 to 21, whereinthe carrier includes a substrate and a buffer layer including at leastone epitaxial layer formed on the substrate.

Various modifications and combinations of the illustrative examples, aswell as other examples of the invention, will be apparent to personsskilled in the art upon reference to the description. It is thereforeintended that the appended claims encompass any such modifications orexamples.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A method, comprising: epitaxially growing aplurality of semiconductor layers of a semiconductor arrangement one ontop of the other; implanting dopant atoms of a first doping type intoeach of the plurality of semiconductor layers, thereby forming aplurality of first implanted regions one on top of the other in avertical direction of the semiconductor arrangement; and implantingdopant atoms of a second doping type into each of the plurality ofsemiconductor layers, thereby forming a plurality of second implantedregions one on top of the other in the vertical direction of thesemiconductor arrangement, wherein the plurality of first implantedregions and the plurality of second implanted regions form asuperjunction structure, wherein at least one of forming the firstimplanted regions and the second implanted regions in at least one ofthe plurality of semiconductor layers comprises a tilted implantationprocess.
 2. The method of claim 1, wherein a tilt angle of the tiltedimplantation process is between 1° and 15° or between 2° and 8° relativeto a normal of a horizontal surface of each semiconductor layersubjected to the tilted implantation process.
 3. The method of claim 1,wherein an implantation vector of the tilted implantation process has ahorizontal vector component and a vertical vector component, whereinimplantation mask used during the tilted implantation process comprisesa plurality of elongated mask openings, and wherein the implantationvector is such that the horizontal vector component is at leastapproximately parallel to a longitudinal direction of the elongated maskopenings.
 4. The method of claim 1, wherein the tilted implantationprocess comprises a first implantation process using a firstimplantation vector and a second implantation process using a secondimplantation vector, wherein each of the first implantation vector andthe second implantation vector has a horizontal vector component and avertical vector component, wherein the vertical vector component of thefirst and second implantation vectors are essentially identical, andwherein the horizontal vector component of the first and secondimplantation vectors point in opposite directions.
 5. The method ofclaim 1, wherein the plurality of semiconductor layers comprises between12 and 30 semiconductor layers.
 6. The method of claim 1, wherein morethan 80% of the plurality of semiconductor layers each have a thicknessof less than 2.5 micrometers, 2.0 micrometers, or less than 1.5micrometers.
 7. The method of claim 1, wherein before implanting thedopant atoms of the first type and the second type, each of theplurality of semiconductor layers is undoped.
 8. The method of claim 1,wherein epitaxially growing the plurality of semiconductor layers oneabove the other comprises: epitaxially growing one or more lowermostlayers of the plurality of semiconductor layers on a semiconductorsubstrate; and epitaxially growing the remainder of the plurality ofsemiconductor layers one on top of the other on the one or morelowermost layers.
 9. The method of claim 8, wherein each of theremainder of the plurality of semiconductor layers has a thickness ofless than 2.5 micrometers, 2.0 micrometers, or less than 1.5micrometers.
 10. The method of claim 8, wherein each of the one or morelowermost layers has a basic doping of the first doping type, andwherein each of the remainder of the plurality of semiconductor layersis undoped.
 11. The method of claim 1, wherein forming one of the firstimplanted regions and the second implanted regions in each of theplurality of semiconductor layers comprises a tilted implantationprocess, and wherein forming the other one of the first implantedregions and the second implanted regions in each of the plurality ofsemiconductor layers comprises a non-tilted implantation process. 12.The method of claim 1, wherein forming the first implanted regions andthe second implanted regions in at least one of the plurality ofsemiconductor layers comprises a tilted implantation process, andwherein forming the first implanted regions and the second implantedregions in the remainder of the plurality of semiconductor layerscomprises a non-tilted implantation process.
 13. The method of claim 12,wherein the at least one of the plurality of semiconductor layerscomprises a lowermost one of the plurality of semiconductor layers. 14.The method of claim 12, wherein the at least one of the plurality ofsemiconductor layers comprises an uppermost one of the plurality ofsemiconductor layers.
 15. The method of claim 12, wherein the at leastone of the plurality of semiconductor layers comprises two or moresemiconductor layers formed one on top of the other of the plurality ofsemiconductor layers.
 16. The method of claim 1, wherein forming thesecond implanted regions in a group of semiconductor layers of theplurality of semiconductor layers comprises a tilted implantationprocess, wherein forming the second implanted regions in the remainderof the plurality of semiconductor layers comprises a non-tiltedimplantation process, and wherein the group of semiconductor layers atleast comprises an uppermost semiconductor layer.
 17. The method ofclaim 16, wherein forming the first implanted regions in the group ofsemiconductor layers comprises a tilted implantation process or anon-tilted implantation process.
 18. The method of claim 1, furthercomprising: performing a temperature process to diffuse the first typedopant atoms and the second type dopant atoms.
 19. The method of claim1, further comprising: forming a plurality of transistor cells in anuppermost one of the plurality of semiconductor layers.
 20. The methodof claim 1, further comprising: forming a further semiconductor layer onan uppermost one of the plurality of semiconductor layers; and forming aplurality of transistor cells in the further semiconductor layer. 21.The method of claim 1, wherein the plurality of semiconductor layerscomprises a plurality of monocrystalline silicon semiconductor layers,and wherein a surface of the plurality of monocrystalline siliconsemiconductor layers into which the dopant atoms of the first dopingtype and the dopant atoms of the second doping type are implanted is a(100) surface of the crystal lattice of the plurality of monocrystallinesilicon semiconductor layers.
 22. The method of claim 21, wherein thedopant atoms of the first doping type are phosphorous atoms, wherein thedopant atoms of the second doping type are boron atoms, and wherein atilt angle of the tilted implantation process is 7° relative to a normalof the (100) surface of the crystal lattice.